Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET

Author

W.-j. Cho*, K. Im, J.-H. Yang, J. Oh, S. Lee, and K. Park

Co-author

Journal of Materials Science 39, 1829 (2004)

Year

2004

Link

https://www.proquest.com/docview/2259679838?pq-origsite=gscholar&fromo… 206회 연결