Defect-free ultra shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications

Author

Y.-H. Yang*, J. Oh, W.-j. Cho, S. Lee, K. Im, and K. Park

Co-author

Journal of the Korean Physics Society 44, 423 (2004)

Year

2004

Link

https://hanyang.elsevierpure.com/en/publications/defect-free-ultra-sha… 222회 연결