Fabrication method of ultra-small SOI MOSFET device structure
- Inventor
- W. Cho, J.-H. Yang, M. G. Jang, S. Lee, K. Park, K. Im, J. Oh
- No.
- Patent, Applied, United State of America, Japan, Korea
- 상태
- 출원
- Year
- 2002
the Laboratory for Energy and Sustainability