Ultra shallow and abrupt n+-p junction formations on Silicon-on-Insulator by solid phase diffusion of Arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices

Author

J. Oh*, K. Im, C.-G. Ahn, J.-H. Yang, W.-j. Cho, S. Lee, and K. Park

Co-author

Materials Science and Engineering B 110, 185 (2004)

Year

2004

Link

https://doi.org/10.1016/j.mseb.2004.03.016 391회 연결