목록 관리 검색 Fabrication of 50nm tri-gate SOI MOSFET without source/drain activation annealing Author K. Im*, W.-j. Cho, C.-G. Ahn, Y.-H. Yang, J. Oh, and S. Lee Co-author Japanese Journal of Applied Physics 43, 2438 (2004) Year 2004 Link https://iopscience.iop.org/article/10.1143/JJAP.43.2438/meta 366회 연결 Japanese Journal of Applied Physics 43, 2438 (2004)
