Fabrication and process simulation of SOI MOSFETs with a 30-nm gate length

Author

W.-j. Cho*, J.-H. Yang, K. Im, J. Oh, S. Lee, and K. Park

Co-author

Journal of the Korean Physics Society 43, 897 (2003)

Year

2003

Link

https://doi.org/10.3938/jkps.43.892 320회 연결