Publication

the Laboratory for Energy and Sustainability

Journals

Journals

Defect-free ultra shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications
Author
Y.-H. Yang*, J. Oh, W.-j. Cho, S. Lee, K. Im, and K. Park
Co-author
Journal of the Korean Physics Society 44, 423 (2004)
Year
2004
Journal of the Korean Physics Society 44, 423 (2004)