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Characterization of Atomic-Layer-Deposited (ALD) Al2O3-Passivated Sub-50-μm-thick Kerf-less Si Wafers by Controlled Spalling

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Abstract

A systematic characterization of sub-50-μm-thick, kerf-less monocrystalline Si wafers fabricated by a controlled fracture method is presented. The spalling process introduces various defects on the Si surface, which result in high surface roughness levels, residual stress, and low effective minority carrier lifetimes. In addition, metals used to induce fracturing in Si diffuse in the Si at room temperature and degrade the effective minority carrier lifetime. Selective removal of these defected Si regions improves the residual stress and effective lifetimes of spalled Si wafers.

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Acknowledgements

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030014020) and by the Climate Change Research Hub (CRH) of KAIST (Grant No. EEWS-2016-N11160017).

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Authors and Affiliations

  1. Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea

    Yong Hwan Lee & Jihun Oh

  2. Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 305-764, Republic of Korea

    Hamchorom Cha & Hyo Sik Chang

  3. Advanced Material Laboratory, Korea Institute of Energy Research, Daejeon, 305-343, Republic of Korea

    Sunho Choi & Boyun Jang

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  1. Yong Hwan Lee
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  2. Hamchorom Cha
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  3. Sunho Choi
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  4. Hyo Sik Chang
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  5. Boyun Jang
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  6. Jihun Oh
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Correspondence to Jihun Oh.

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Lee, Y.H., Cha, H., Choi, S. et al. Characterization of Atomic-Layer-Deposited (ALD) Al2O3-Passivated Sub-50-μm-thick Kerf-less Si Wafers by Controlled Spalling. Electron. Mater. Lett. 14, 363–369 (2018). https://doi.org/10.1007/s13391-018-0039-9

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  • DOI: https://doi.org/10.1007/s13391-018-0039-9

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